2007. 6. 8 1/2 semiconductor technical data PG05NSSMC single line tvs diode for esd protection revision no : 1 protection of voltage sensitive components. features low profile package. transient protection for data line to applications devices for unidirectional applications. automotive controller. notebooks, desktops, & servers. maximum rating (ta=25 ) smc dim millimeters a a b b 1 2 c c d d e e e f f g 6.60 ~ 7.11 5.59 ~ 6.22 2.92 ~ 3.07 7.75 ~ 8.13 0.76 ~ 1.52 2.00 ~ 2.62 0.15 ~ 0.31 0.10 ~ 0.20 h g h 1. anode 2. cathode * notes) : (1) derated above ta=25 per power derating curve. (2) mounted on 0.31 0.31 (8.0 8.0 ) copper pads to each terminal. (3) mounted on minimum recommened pad lay out type name marking t05 lot no. electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =10ma 6.40 - 7.07 v reverse leakage current i r v rwm =5v - - 1000 a clamping voltage v c i pp =163a, tp=10/1000 s - - 9.2 v characteristic symbol rating unit peak pulse power (tp=10/1000 s) p pk 1500 w peak pulse current (tp=10/1000 s) i pp 163 a operating temperature t j -55 150 storage temperature t stg -55 150
2007. 6. 8 2/2 PG05NSSMC revision no : 1 non-repetitive peak pulse power vs. pulse time pulse duration t p (sec) 1.0ms 100 s 1 10ms 0.1 1.0 10 peak pulse power p pk (kw) 10 0.1 100 rated power or i pp (%) 0 120 40 0 power deration curve 80 120 160 200 20 40 80 100 60 ambient temperature ta ( c) peak pulse current i pp (%) time (ms) pulse waveform 0 120 1 0 2345 20 40 80 100 60 peak value i ppm t d half value i pp/2 =10 s
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